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| SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE PARTMARKING DETAIL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range FZT692B FZT792A SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg FZT792A C E C B ABSOLUTE MAXIMUM RATINGS VALUE -75 -70 -5 -5 -2 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Cut-Off Currents ICBO MIN. -75 -70 -5 TYP. -100 -90 -8.5 -0.1 -10 -0.1 -0.30 -0.30 -0.30 -0.80 -0.45 -0.50 -0.50 -0.95 MAX. UNIT V V V A A A CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-40V VCB=-40V, Tamb=100C VEB=-4V IC=-500mA, IB=-5mA* IC=-1A, IB=-25mA* IC=-2A, IB=-200mA* IC=-1A, IB=-25mA* IEBO Saturation Voltages VCE(sat) V V V V VBE(sat) 3 - 250 FZT792A ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL VBE(on) hFE 300 250 200 100 160 225 22 35 750 MIN. TYP. -0.75 800 MAX. UNIT V CONDITIONS. IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* MHz pF pF ns ns IC=-50mA, VCE=-5V f=50MHz VEB=0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA, IB2=-50mA, VCC=-10V fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 251 FZT792A TYPICAL CHARACTERISTICS 1.8 1.6 1.4 IC/IB=40 IC/IB=20 IC/IB=10 Tamb=25C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55C +25C +100C +175C IC/IB=100 - (Volts) 1.0 0.8 0.6 0.4 0.2 0 V V - (Volts) 1.2 0.01 0.1 1 10 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 +100C +25C -55C VCE=2V 750 1.6 1.4 -55C +25C +100C +175C IC/IB=40 - Normalised Gain 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 500 - (Volts) V 1.2 - Typical Gain 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 250 h IC - Collector Current (Amps) h IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55C +25C +100C VCE=2V 10 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 1 0.1 DC 1s 100ms 10ms 1ms 100s V 0.01 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 252 |
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